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DOI:10.1109/TED.2020.3019019 - Corpus ID: 220935558
@article{Bucher2020GeneralizedCC, title={Generalized Constant Current Method for Determining MOSFET Threshold Voltage}, author={Matthias Bucher and Nikolaos Makris and Loukas Chevas}, journal={IEEE Transactions on Electron Devices}, year={2020}, volume={67}, pages={4559-4562}, url={https://api.semanticscholar.org/CorpusID:220935558}}- M. Bucher, N. Makris, Loukas Chevas
- Published in IEEE Transactions on Electron… 2 August 2020
- Engineering, Physics
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of MOSFETs to extract threshold voltage and other substrate-effect-related parameters. The method is applicable over a wide range of current throughout weak and moderate inversion, and to some extent in strong inversion. This method is particularly useful when…
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9 Citations
- Loukas ChevasN. Makris M. Bucher
- 2022
Engineering, Physics
2022 IEEE Latin American Electron Devices…
The increased usage of high electron mobility transistors (HEMTs), especially using GaN, for a large range of applications demands for efficient circuit design models. The paper discusses the…
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- Rui LiuHao LiZhao YangGuantao WangZefu ChenPeiyong Zhang
- 2024
Engineering, Computer Science
IEEE Transactions on Semiconductor Manufacturing
This scheme ingeniously achieves on-chip measurement of all transistors threshold voltages without altering compact SRAM bit array layout and can effectively detect the cell position of the transistor threshold voltage mismatch simulated by modifying the substrate voltage.
- R. NiroshaR. Agarwal
- 2023
Engineering, Physics
Microelectronics Reliability
- 2
- M. BucherN. MakrisLoukas Chevas
- 2023
Engineering, Physics
2023 IEEE Latin American Electron Devices…
The present work describes a technique for extracting MOSFET threshold voltage from linear to saturation modes. Based on the charge-based model, transconductance-to-current ratio provides a direct…
- Hao ChangGuilei Wang Wen Wang
- 2023
Engineering, Physics
Nanomaterials
In this article, an experimental study on the gate-induced drain leakage (GIDL) current repairing worst hot carrier degradation (HCD) in Si p-FinFETs is investigated with the aid of an ultra-fast…
- Hao ChangQianqian Liu Wenwu Wang
- 2023
Engineering, Physics
IEEE Electron Device Letters
In this study, the gate induced drain leakage (GIDL) of Si p-FinFET and its recovery effect on hot carrier degradation (HCD) were experimentally studied to further its physical understanding. It’s…
- 2
- Shou-Yen ChaoW. LanShou-Kong FanZi-Wen ZhonMu-Chun Wang
- 2022
Engineering, Materials Science
Micromachines
The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not…
- N. MakrisM. Bucher
- 2021
Engineering, Physics
A MOSFET threshold voltage extraction method covering the entire range of drain-to-source voltage, from linear to saturation modes, is presented. Transconductance-to-current ratio is obtained from…
- João Roberto Raposo De Oliveira MartinsA. MostafaJ. JuillardRachid HamaniFrancisco de Oliveira AlvesPietro Maris Ferreira
- 2021
Engineering, Computer Science
IEEE Open Journal of Circuits and Systems
A gm over Id technique for designing temperature-aware circuits that can be used either on measurement data, analytically, or based on simulation models is proposed.
- 5
- PDF
16 References
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Engineering, Physics
IEEE Transactions on Electron Devices
The constant-current (CC) method uses a current criterion to determine the threshold voltage (VTH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the same current…
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- Highly Influential
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Engineering, Physics
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Engineering, Physics
Proceedings of International Conference on…
This paper presents a new parameter extraction methodology, based on an accurate and continuous MOS model dedicated to low-voltage and low-current analog circuit design and simulation (EKV MOST…
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- Highly Influential
- PDF
- T. RudenkoV. KilchytskaM. ArshadJ. RaskinA. NazarovD. Flandre
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Engineering, Physics
IEEE Transactions on Electron Devices
In this paper, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the transconductance change and transconductance-to-current ratio change…
- 46
- Highly Influential
- PDF
- S. KhandelwalH. Agarwal C. Hu
- 2015
Engineering, Physics
IEEE Transactions on Computer-Aided Design of…
It is found that Iedge has a different sub-threshold slope, body-bias coefficient, and short-channel behavior as compared to Imain, so an accurate, efficient, and scalable model for Iedge is developed.
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Engineering, Physics
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By using ring gate structure, it is found that bulk-bias dependence of σ(ΔVg) becomes predictable even at operation current level of sub nA.
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- 2010
Engineering, Physics
2010 10th IEEE International Conference on Solid…
Analog circuit designs are often biased to work in sub-threshold mode with good gate-source voltage matching performances. Depending on the process, hump effect may change the MOS characteristics for…
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Engineering, Physics
The evolution of the active area/isolation transition has resulted in modification of the isolation induced parasitic effects on the device. Based on experimental and simulation results, this paper…
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Fig. 4. Application of the GCC method in presence of edge conduction phenomenon in STI MOSFETs. Width of center and edge transistors sum up to the total width W = Wc + We. Transfer characteristics of a wide/long n…
Published in IEEE Transactions on Electron Devices 2020
Generalized Constant Current Method for Determining MOSFET Threshold Voltage
M. BucherN. MakrisLoukas Chevas
Figure 4 of 5
